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SOLUTIONS MANUAL for Dopants and Defects in Semiconductors 2nd Edition by Matthew McCluskey, Eugene Haller and Eugene Haller | All Chapters 1-1229,99 €
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SOLUTIONS MANUAL for Dopants and Defects in Semiconductors 2nd Edition by Matthew McCluskey, Eugene Haller and Eugene Haller | All Chapters 1-12
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Dopants and Defects in Semiconductors, Second Edition
SOLUTIONS MANUAL for Dopants and Defects in Semiconductors 2nd Edition by Matthew McCluskey, Eugene Haller and Eugene Haller ISBN 9781351977975 (All Chapters 1-12)
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Dopants and Defects in Semiconductors 2nd Edition
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, Dopants and Defects in Semiconductors
Second Edition
Matthew D. McCluskey and Eugene E. Haller
Solutions Manual
*Corrections or comments may be sent to mattmcc@alum.mit.edu
1
,Chapter 1
1.1 Silicon density = 2.33 g/cm3.
1 mole = 28 g
(2.33 g/cm3)(1 mole / 28 g)(6.02×1023 / mole) = 5×1022 cm-3
8/a3 = 5×1022 cm-3
a = 5.5×10-8 cm = 5.5 Å
2 3
d a 2 42 a 2 4 a 2 42 a = 2.39 Å
4
1.2 Germanium a = 5.66 Å = 5.66×10-8 cm.
Density = 8/a3 = 4.4×1022 cm-3
1.3 Strontium titanate (SrTiO3) has the perovskite structure.
(a) Unit cube with the atoms:
(b) Each Ti atom is bonded to 6 O atoms.
(c) Molecular mass = 183.49u
a = 3.9 Å
Number density = 1/a3 = 1.69×1022 cm-3
(1.69×1022 / cm3)(183.49 g / mole)(1 mole / 6.02×1023) = 5.14 g/cm3
1.4 Plot E versus kx along the [100] direction, up to a maximum energy of 52π2/2ma2.
2
, 2 2
2 2 2
2 2
E k x nx k y ny kz nz
2m a a a
2 2
1. nx = ny = nz = 0, E kx
2m
2 2 22
2. nx = 0, ny or nz = ±1, E kx 4
2m 2ma 2
2
2 2
3. nx = ±1, ny = nz = 0, E kx
2m a
1.5 An intrinsic semiconductor has no defects, or few enough to not affect its properties
significantly. An extrinsic semiconductor’s properties are determined by defects.
1.6 f E E E / kT
1 1
4.0 = 0.018
e F
1 e 1
1.7 The effective mass is the largest for the heavy-hole band.
3
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